A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature

This paper presents the development and demonstration of large-area 10-kV 4H-SiC DMOSFETs that maintain a classically stable low-leakage normally off subthreshold characteristic when operated at les200degC. This is achieved by an additional growth (epitaxial regrowth) of a thin epitaxial layer on to...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2008-08, Vol.55 (8), p.1807-1815
Main Authors: Howell, R.S., Buchoff, S., Van Campen, S., McNutt, T.R., Ezis, A., Nechay, B., Kirby, C.F., Sherwin, M.E., Clarke, R.C., Singh, R.
Format: Article
Language:English
Subjects:
Breakdown
Devices
Epitaxial growth
Epitaxial layers
Gates
Mathematical analysis
Mathematical models
Oxidation
Power MOSFETs
power switching
silicon carbide
subthreshold behavior
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Summary:This paper presents the development and demonstration of large-area 10-kV 4H-SiC DMOSFETs that maintain a classically stable low-leakage normally off subthreshold characteristic when operated at les200degC. This is achieved by an additional growth (epitaxial regrowth) of a thin epitaxial layer on top of already implanted p-well regions in conjunction with a N20-based gate oxidation process. Additionally, the design space of the DMOSFET structure was explored using analytical and numerical modeling together with experimental verification. The resulting 0.15-cm 2 active 0.43-cm 2 die DMOSFET with 10-kV breakdown provides I DS = 8 A at a gate field of 3 MV/cm, along with a subthreshold current at V GS = 0 V that decreases from 1 muA (6.7 muA/cm 2 ) at 25degC to 0.4 muA (2.7 muA/cm 2 ) at 200degC.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2008.928204