Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation

We investigate the transport properties of silicon- nanowire FETs by using two different approaches to the solution of the Boltzmann equation for the quasi-1-D electron gas, namely, the Monte Carlo method and a deterministic numerical solver. In both cases, we first solve the coupled Schrodinger-Poi...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2008-08, Vol.55 (8), p.2086-2096
Main Authors: Lenzi, M., Palestri, P., Gnani, E., Reggiani, S., Gnudi, A., Esseni, D., Selmi, L., Baccarani, G.
Format: Article
Language:English
Subjects:
Applied sciences
Boltzmann equation
Boltzmann transport equation
Electronics
Exact sciences and technology
Gates
Mathematical analysis
Mathematical models
mobility
Monte Carlo
Monte Carlo methods
Monte Carlo simulation
Nanowires
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
simulation
surface roughness
Transistors
Transport properties
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Summary:We investigate the transport properties of silicon- nanowire FETs by using two different approaches to the solution of the Boltzmann equation for the quasi-1-D electron gas, namely, the Monte Carlo method and a deterministic numerical solver. In both cases, we first solve the coupled Schrodinger-Poisson equations to extract the profiles of the 1-D subbands along the channel; next, the coupled multisubband Boltzmann equations are tackled with the two different procedures. A very good agreement is achieved between the two approaches to the transport problem in terms of mobility, drain-current, and internal physical quantities, such as carrier-distribution functions and average velocities. Some peculiar features of the low-field mobility as a function of the wire diameter and gate bias are discussed and justified based on the subband energy and wave-function behavior within the cylindrical geometry of the nanowire, as well as the heavy degeneracy of the electron gas at large gate biases.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2008.926230