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Structure of Ce2RhIn8: an example of complementary use of high-resolution neutron powder diffraction and reciprocal-space mapping to study complex materials

The room‐temperature crystal structure of the heavy fermion antiferromagnet Ce2RhIn8, dicerium rhodium octaindide, has been studied by a combination of high‐resolution synchrotron X‐ray reciprocal‐space mapping of single crystals and high‐resolution time‐of‐flight neutron powder diffraction. The str...

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Bibliographic Details
Published in:Acta crystallographica. Section B, Structural science Structural science, 2006-04, Vol.62 (2), p.173-189
Main Authors: Sarrao, J. L., Ibberson, R. M., Fisk, Z., Moshopoulou, E. G., Thompson, J. D.
Format: Article
Language:English
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Summary:The room‐temperature crystal structure of the heavy fermion antiferromagnet Ce2RhIn8, dicerium rhodium octaindide, has been studied by a combination of high‐resolution synchrotron X‐ray reciprocal‐space mapping of single crystals and high‐resolution time‐of‐flight neutron powder diffraction. The structure is disordered, exhibiting a complex interplay of non‐periodic, partially correlated planar defects, coexistence and segregation of polytypic phases (induced by periodic planar `defects'), mosaicity (i.e. domain misalignment) and non‐uniform strain. These effects evolve as a function of temperature in a complicated way, but they remain down to low temperatures. The room‐temperature diffraction data are best represented by a complex mixture of two polytypic phases, which are affected by non‐periodic, partially correlated planar defects, differ slightly in their tetragonal structures, and exhibit different mosaicities and strain values. Therefore, Ce2RhIn8 approaches the paracrystalline state, rather than the classic crystalline state and thus several of the concepts of conventional single‐crystal crystallography are inapplicable. The structural results are discussed in the context of the role of disorder in the heavy‐fermion state and in the interplay between superconductivity and magnetism.
ISSN:0108-7681
2052-5192
1600-5740
2052-5206
DOI:10.1107/S0108768106003314