Magnetic Domain-Wall Racetrack Memory

Recent developments in the controlled movement of domain walls in magnetic nanowires by short pulses of spin-polarized current give promise of a nonvolatile memory device with the high performance and reliability of conventional solid-state memory but at the low cost of conventional magnetic disk dr...

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Bibliographic Details
Published in:Science (American Association for the Advancement of Science) 2008-04, Vol.320 (5873), p.190-194
Main Authors: Parkin, Stuart S.P, Hayashi, Masamitsu, Thomas, Luc
Format: Article
Language:English
Subjects:
Applied sciences
Chirality
Computer memory
Critical current
Current density
Disk drives
Electric current
Electric currents
Electronics
Exact sciences and technology
Information storage
Integrated circuits
Integrated circuits by function (including memories and processors)
Kinetics
Magnetic and optical mass memories
Magnetic fields
Magnetism
Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics
Molecular electronics, nanoelectronics
Nanowires
Racetracks
Resonance
Review
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Storage and reproduction of information
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Description
Summary:Recent developments in the controlled movement of domain walls in magnetic nanowires by short pulses of spin-polarized current give promise of a nonvolatile memory device with the high performance and reliability of conventional solid-state memory but at the low cost of conventional magnetic disk drive storage. The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip. Individual spintronic reading and writing nanodevices are used to modify or read a train of ~10 to 100 domain walls, which store a series of data bits in each nanowire. This racetrack memory is an example of the move toward innately three-dimensional microelectronic devices.
ISSN:0036-8075
1095-9203
DOI:10.1126/science.1145799