Dual-diode quantum-well modulator for C-band wavelength conversion and broadcasting

We present a dual-diode, InGaAsP/InP quantum-well modulator that incorporates a monolithically-integrated, InGaAs photodiode as a part of its on-chip, InP optoelectronic circuit. We theoretically show that such a dual-diode modulator allows for wavelength conversion with 10-dB RF-extinction ratio us...

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Bibliographic Details
Published in:Optics express 2004-01, Vol.12 (2), p.310-316, Article 310
Main Authors: Demir, Hilmi, Sabnis, Vijit, Fidaner, Onur, Harris, Jr, James, Miller, David, Zheng, Jun-Fei
Format: Article
Language:English
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Summary:We present a dual-diode, InGaAsP/InP quantum-well modulator that incorporates a monolithically-integrated, InGaAs photodiode as a part of its on-chip, InP optoelectronic circuit. We theoretically show that such a dual-diode modulator allows for wavelength conversion with 10-dB RF-extinction ratio using 7 mW absorbed optical power at 10 Gb/s. We experimentally demonstrate unlimited wavelength conversion across 45 nm between 1525 nm and 1570 nm, and dual-wavelength broadcasting over 20 nm between 1530 nm and 1565 nm, spanning the entire C-band with >10dB RF-extinction ratio and using 3.1-6.7 mW absorbed optical power at 1.25 Gb/s.
ISSN:1094-4087
1094-4087
DOI:10.1364/OPEX.12.000310