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Gating of inwardly rectifying K + channels localized to a single negatively charged residue

INWARDLY rectifying K + channels (IRKs) conduct current preferentially in the inward direction. This inward rectification has two components: voltage-dependent blockade by intracellular Mg 2+ (Mg i 2+ ) l–7 and intrinsic gating 8,9 . Two members of this channel family, IRK1 (ref. 10) and ROMK1 (ref....

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Bibliographic Details
Published in:Nature (London) 1994-09, Vol.371 (6494), p.246-249
Main Authors: Wible, Barbara A, Taglialatela, Maurizio, Ficker, Eckhard, Brown, Arthur M
Format: Article
Language:English
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Summary:INWARDLY rectifying K + channels (IRKs) conduct current preferentially in the inward direction. This inward rectification has two components: voltage-dependent blockade by intracellular Mg 2+ (Mg i 2+ ) l–7 and intrinsic gating 8,9 . Two members of this channel family, IRK1 (ref. 10) and ROMK1 (ref. 11), differ markedly in affinity for Mg i 2+ (ref. 12). We found that IRK1 and ROMK1 differ in voltage-dependent gating and searched for the gating structure by large-scale and site-directed mutagenesis. We found that a single amino-acid change within the putative transmembrane domain M2, aspartate (D) in IRK1 to the corresponding asparagine (N) in ROMK1, controls the gating phenotype. Mutation D172N in IRK1 produced ROMKl-like gating whereas the reverse mutation in ROMK1—N17ID—produced IRKl-like gating. Thus, a single negatively charged residue seems to be a crucial determinant of gating.
ISSN:0028-0836
1476-4687
DOI:10.1038/371246a0