Loading…
Gating of inwardly rectifying K + channels localized to a single negatively charged residue
INWARDLY rectifying K + channels (IRKs) conduct current preferentially in the inward direction. This inward rectification has two components: voltage-dependent blockade by intracellular Mg 2+ (Mg i 2+ ) l–7 and intrinsic gating 8,9 . Two members of this channel family, IRK1 (ref. 10) and ROMK1 (ref....
Saved in:
Published in: | Nature (London) 1994-09, Vol.371 (6494), p.246-249 |
---|---|
Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | INWARDLY rectifying K
+
channels (IRKs) conduct current preferentially in the inward direction. This inward rectification has two components: voltage-dependent blockade by intracellular Mg
2+
(Mg
i
2+
)
l–7
and intrinsic gating
8,9
. Two members of this channel family, IRK1 (ref. 10) and ROMK1 (ref. 11), differ markedly in affinity for Mg
i
2+
(ref. 12). We found that IRK1 and ROMK1 differ in voltage-dependent gating and searched for the gating structure by large-scale and site-directed mutagenesis. We found that a single amino-acid change within the putative transmembrane domain M2, aspartate (D) in IRK1 to the corresponding asparagine (N) in ROMK1, controls the gating phenotype. Mutation D172N in IRK1 produced ROMKl-like gating whereas the reverse mutation in ROMK1—N17ID—produced IRKl-like gating. Thus, a single negatively charged residue seems to be a crucial determinant of gating. |
---|---|
ISSN: | 0028-0836 1476-4687 |
DOI: | 10.1038/371246a0 |