Comparison between normal and reverse thin crystalline silicon solar cells

• Published in: Solar energy materials and solar cells 1996-01, Vol.43 (2), p.183-191
• Main Authors: Benati, A., Butturi, M.A., Capperdoni, C., Carotta, M.C., Martinelli, G., Merli, M., Passari, L., Sartori, G., Van Steenwinkel, R., Youssef, G.M.
• Format: Article
• Language: English
• Subjects: Crystalline materials; Semiconductor junctions; Silicon; Silicon wafers; Thin cell
• ISSN: 0927-0248; 1879-3398
• DOI: 10.1016/0927-0248(95)00165-4

The newly developed ingot growing techniques, as the three-grain and the columnar multigrain ingot processes, are now offering the possibility of slicing thinner wafers (≤ 100 μm). In this paper we present the results obtained on p type large area (≥ 100 cm 2) and 100 μm thick wafers by using both conventional and reverse cell manufacturing technologies. The conventional cells are provided with aluminium or boron BSF plus screen-printed silver mirror or a silver-aluminium net; the reverse cells have a FSF and the deep back junction completely covered by a screen-printed or CVD silver layer. The constructing parameters have been chosen on the base of one and two dimensions modeling and both raw material and devices have been completely characterized. This work shows that very thin wafers do not introduce serious problems for the conventional manufacturing of solar cells. The efficiencies of the normal and of the reverse cells are found to be comparable and are of the same order than those of thicker cells, however at a significant lower cost. The main obtained result has to be related to the demonstration of a cell manufacturing feasibility starting from very thin wafers.