Microstructuring of fused silica by laser-induced backside wet etching using picosecond laser pulses

• Published in: Applied surface science 2010-09, Vol.256 (23), p.7222-7227
• Main Authors: Ehrhardt, M., Raciukaitis, G., Gecys, P., Zimmer, K.
• Format: Article
• Language: English
• Subjects: Absorption; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electron and ion emission by liquids and solids; impact phenomena; Etching; Exact sciences and technology; Fluence; Fused silica; Impact phenomena (including electron spectra and sputtering); Laser; Laser-beam impact phenomena; Lasers; LIBWE; Liquids; Materials science; Nanostructure; Physics; Picosecond; Pyrenes; Structuring; Surface cleaning, etching, patterning; Surface treatments; Thresholds; Toluene
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2010.05.055

The laser-induced backside wet etching (LIBWE) is an advanced laser processing method used for structuring transparent materials. LIBWE with nanosecond laser pulses has been successfully demonstrated for various materials, e.g. oxides (fused silica, sapphire) or fluorides (CaF 2, MgF 2), and applied for the fabrication of microstructures. In the present study, LIBWE of fused silica with mode-locked picosecond ( t p = 10 ps) lasers at UV wavelengths ( λ 1 = 355 nm and λ 2 = 266 nm) using a (pyrene) toluene solution was demonstrated for the first time. The influence of the experimental parameters, such as laser fluence, pulse number, and absorbing liquid, on the etch rate and the resulting surface morphology were investigated. The etch rate grew linearly with the laser fluence in the low and in the high fluence range with different slopes. Incubation at low pulse numbers as well as a nearly constant etch rate after a specific pulse number for example were observed. Additionally, the etch rate depended on the absorbing liquid used; whereas the higher absorption of the admixture of pyrene in the used toluene enhances the etch rate and decreases the threshold fluence. With a λ 1 = 266 nm laser set-up, an exceptionally smooth surface in the etch pits was achieved. For both wavelengths ( λ 1 = 266 nm and λ 2 = 355 nm), LIPSS (laser-induced periodic surface structures) formation was observed, especially at laser fluences near the thresholds of 170 and 120 mJ/cm 2, respectively.