FTIR, AFM and PL properties of thin SiO x films deposited by HFCVD

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2010-10, Vol.174 (1), p.88-92
• Main Authors: Luna-López, J.A., García-Salgado, G., Díaz-Becerril, T., López, J. Carrillo, Vázquez-Valerdi, D.E., Juárez-Santiesteban, H., Rosendo-Andrés, E., Coyopol, A.
• Format: Article
• Language: English
• Subjects: Absorption spectra; AFM; Atomic force microscopy; Compatibility; Ellipsometry; FTIR; Materials science; Non-stoichiometric silicon oxide (SiO x); Photoluminescence; Refractive index; Silicon; Silicon dioxide; Vibration mode
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/j.mseb.2010.05.005

In order to have optoelectronic functions integrated in a single chip, it is very important to obtain a silicon compatible material with an optimal photoluminescence response. The non-stoichiometric silicon oxide (SiO x ) has shown photoluminescence response and is also compatible with silicon technology. In this work, the composition and optical properties of the SiO x films are studied using null ellipsometry, Fourier transformed infrared spectroscopy (FTIR), atomic force microscopy (AFM), and photoluminescence (PL). The SiO x films were growth to different temperatures. The IR absorption spectrum shows the presence of three typical Si–O–Si vibrations modes in SiO 2. However, changes in their intensity and position were observed. Also, when growth temperature decreased, the Si–H vibrations modes were observed. These changes are directly related with compositional variation in the SiO x films due to the growth temperature. A PL spectrum shows a considerable emission in the range 400–850 nm that varies with the growth temperatures.