Effects of electric field and magnetic induction on spin injection into organic semiconductors

Spin-polarized injection and transport into ferromagnetic/organic semiconductor structure are studied theoretically in the presence of the external electric field and magnetic induction. Based on the spin-drift–diffusion theory and Ohm's law, we obtain the charge current polarization, which tak...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2011-02, Vol.406 (4), p.926-929
Main Authors: Wang, Y.M., Ren, J.F., Yuan, X.B., Dou, Z.T., Hu, G.C.
Format: Article
Language:English
Subjects:
Carriers
Condensed matter
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Current carriers
Current spin polarization
Electric fields
Electronic transport in condensed matter
Exact sciences and technology
Magnetic induction
Mathematical analysis
Organic semiconductors
Organic spintronics
Physics
Polarization
Spin polarized transport
Spin-diffusion and drift
Tuning
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Summary:Spin-polarized injection and transport into ferromagnetic/organic semiconductor structure are studied theoretically in the presence of the external electric field and magnetic induction. Based on the spin-drift–diffusion theory and Ohm's law, we obtain the charge current polarization, which takes into account the special carriers of organic semiconductors. From the calculation, it is found that the current spin polarization is enhanced by several orders of magnitude by tuning the magnetic induction and electric fields. To get an apparent current spin polarization, the effects of spin-depended interfacial resistances and the special carriers in the organic semiconductor, which are polarons and bipolarons, are also discussed. ► Current polarization in ferromagnetic/organic semiconductor structure is obtained. ► Calculations are based on spin-drift–diffusion theory and Ohm's law. ► Current polarization is enhanced by tuning magnetic induction and electric fields. ► Effects of interfacial resistances and the special carriers are also discussed.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2010.12.029