Chemical and microstructural modifications in LiPON thin films exposed to atmospheric humidity

Lithium phosphorus oxynitride (LiPON), the widely used solid electrolyte for thin film microbatteries, is not compatible with the ambient humid temperatures. The reasons for reduction in ionic conductivity of LiPON thin films from 2.8×10−6 Scm−1 to 9.9×10−10 Scm−1 when exposed to air are analyzed wi...

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Bibliographic Details
Published in:Solid state ionics 2011-03, Vol.185 (1), p.47-51
Main Authors: Nimisha, C.S., Rao, G. Mohan, Munichandraiah, N., Natarajan, Gomathi, Cameron, David C.
Format: Article
Language:English
Subjects:
Deposition
Exposure
Ionic conductivity
Lithium
Microorganisms
Microstructure
Moisture effects
Phosphorus
Silicon
Solid electrolyte
Thin films
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Summary:Lithium phosphorus oxynitride (LiPON), the widely used solid electrolyte for thin film microbatteries, is not compatible with the ambient humid temperatures. The reasons for reduction in ionic conductivity of LiPON thin films from 2.8×10−6 Scm−1 to 9.9×10−10 Scm−1 when exposed to air are analyzed with the aid of AC impedance measurements, SEM, XPS and stylus profilometry. Initially, particulate-free film surfaces obtained soon after rf sputter deposition in N2 ambient conditions becomes covered with microstructures, forming pores in the film when exposed to air. LiPON films are deposited on Ti coated silicon in addition to bare silicon, ruling out the possibility of stress-related rupturing from the LiPON/Si interface. The reduction of nitrogen, phosphorus, and increased presence of lithium, oxygen and carbon over the film surface lowers the ionic conductivity of LiPON films when exposed to air. ► About effect of moisture on reduction in ionic conductivity of RF sputter deposited LiPON thin film. ► The reasons for reduction in ionic conductivity of LiPON thin films from 2.8×10–6 Scm–1 to 9.9×10–10 Scm–1 when exposed to air are analyzed. ► Exposure to humid ambience changes the surface morphology and elemental chemistry of LiPON.
ISSN:0167-2738
1872-7689
DOI:10.1016/j.ssi.2011.01.001