The Role of Carbon and Dysprosium in Ni[Dy]Si:C Contacts for Schottky-Barrier Height Reduction and Application in N-Channel MOSFETs With Si:C Source/Drain Stressors

We clarify the role of carbon and dysprosium in nickel-dysprosium-silicide (Ni[Dy]Si:C) contacts formed on silicon:carbon (Si 1- yCy or Si:C) for Schottky-barrier height (SBH) reduction. Carbon-induced energy bandgap Eg narrowing and the segregation of dysprosium (Dy) at the Ni[Dy]Si:C/Si:C interfac...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2009-11, Vol.56 (11), p.2770-2777
Main Authors: Lee, R., Koh, A.T.-Y., Kian-Ming Tan, Tsung-Yang Liow, Dong Zhi Chi, Yee-Chia Yeo
Format: Article
Language:English
Subjects:
Annealing
Carbon
Devices
Drains
Dysprosium
FinFET
Implants
Junctions
Logic gates
Modulation
MOSFETs
nickel silicide
Niobium
Reduction
Schottky barrier
Segregation
Segregations
Silicon
silicon:carbon
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Summary:We clarify the role of carbon and dysprosium in nickel-dysprosium-silicide (Ni[Dy]Si:C) contacts formed on silicon:carbon (Si 1- yCy or Si:C) for Schottky-barrier height (SBH) reduction. Carbon-induced energy bandgap Eg narrowing and the segregation of dysprosium (Dy) at the Ni[Dy]Si:C/Si:C interface were shown to be responsible for SBH reduction in this paper. First, we show that electron barrier height (PhiBN) reduction of up to 69 meV (or 10.3%) for NiSi can be achieved with the scaling of substitutional carbon C sub concentration from 0% to 1.0%. Second, new evidence revealing the segregation of Dy-based interlayer at the Ni[Dy]Si:C/Si:C interface and an additional 321 meV (or 53%) reduction in PhiBN for NiSi:C are presented. This could be due to charge transfer at the Ni[Dy]Si:C/Si:C interface. The successful modulation of PhiBN for Ni[Dy]S:C translates to an effective 41% reduction in device R EXT , resulting in improved drive current performance. This opens new avenues to optimize the Si 1-y C y contact interface for extending transistor performance in future technological generations.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2009.2030873