Solid-State Impact-Ionization Multiplier With P-N Junction Injection Node

The Solid-state Impact-ionization Multiplier (SIM) was designed to amplify signals from arbitrary current sources through impact ionization. A primary application is amplification of signals produced by photodiodes. Photodiodes made from any semiconductor can be wired directly to the SIM's inje...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2009-06, Vol.56 (6), p.1360-1364
Main Authors: Johnson, M.S., Beutler, J.L., Nelson, A.P., Hawkins, A.R.
Format: Article
Language:English
Subjects:
Amplification
Applied sciences
Avalanche breakdown
avalanche diodes
Circuit properties
Compound structure devices
Depletion
Devices
Digital circuits
Electric, optical and optoelectronic circuits
Electronic circuits
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
impact ionization
Mathematical models
Optoelectronic devices
P-n junctions
Photodiodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
SIM
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Description
Summary:The Solid-state Impact-ionization Multiplier (SIM) was designed to amplify signals from arbitrary current sources through impact ionization. A primary application is amplification of signals produced by photodiodes. Photodiodes made from any semiconductor can be wired directly to the SIM's injection node. In previous versions of the SIM, this injection node was a Schottky contact to silicon. This paper describes a SIM design that injects electrons into the SIM's depletion region through a p-n junction. The injection node is analyzed including how the node's floating voltage changes versus input current. Devices were made using epitaxial silicon and modeled using commercial software. The measured gain characteristics match closely to simulated results and are influenced by high electric fields near the SIM's depletion region edges. Measured frequency response was dominated by charging effects related to the floating node, leading to a response that scales with the inverse of the input current.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2009.2019421