Quantitative Experimental Analysis of Schottky Barriers and PooleaFrenkel Emission in Carbon Nanotube Devices

In this paper, we investigated carbon nanotube FETs (CNT FETs) utilizing semiconducting single-walled CNTs (SWCNTs). Multiple devices, each of different metal source and drain contacts, were fabricated on a single SWCNT. Over specific temperature regimes, transport properties of the devices were fou...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on nanotechnology 2009-01, Vol.8 (3)
Main Authors: Perello, D, Bae, Dong Jae, Kim, MJ, Cha, DongKyu, Jeong, Seung Yol, Kang, Bo Ram, Yu, Woo Jong, Lee, He Younge, Yun, Minhee
Format: Article
Language:English
Subjects:
Barriers
Carbon nanotubes
Devices
Drains
Nanostructure
Palladium
Single wall carbon nanotubes
Thermionic emission
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this paper, we investigated carbon nanotube FETs (CNT FETs) utilizing semiconducting single-walled CNTs (SWCNTs). Multiple devices, each of different metal source and drain contacts, were fabricated on a single SWCNT. Over specific temperature regimes, transport properties of the devices were found to be consistent with the Bethe theory of thermionic emission for Schottky contacts, and the Poole-Frenkel emission was dependent on the device position. As was expected, transport from thermionic emission over the barrier was found to be the dominant mechanism. Barriers of 25-41 meV were present, as found by activation energy analysis for temperatures ranging from 20 to 300 K for the devices. A Schottky diode was also fabricated on a separate nanotube using an ohmic contact at the Pd source and a Schottky contact for the Ag drain electrode. Assuming the same physical assumptions for an Si semiconductor device, the results indicate an ideality factor greater than 2, Schottky barrier of ~0.37 eV, and image charge lowering of ~0.1 eV.
ISSN:1536-125X
DOI:10.1109/TNANO.2008.2008804