Linear Energy Transfer of Heavy Ions in Silicon

Researchers performing radiation testing on electronic components often rely on semi-empirical prediction codes for determining the linear energy transfer (LET) (or electronic stopping force) of ions, without paying much attention to their reliability. However, it is seen that estimations calculated...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2007-08, Vol.54 (4), p.1158-1162
Main Authors: Javanainen, A., Malkiewicz, T., Perkowski, J., Trzaska, W.H., Virtanen, A., Berger, G., Hajdas, W., Harboe-Sorensen, R., Kettunen, H., Lyapin, V., Mutterer, M., Pirojenko, A., Riihimaki, I., Sajavaara, T., Tyurin, G., Whitlow, H.J.
Format: Article
Language:English
Subjects:
Durability
Electronic components
Electronic devices
Electronic equipment testing
Electronic stopping force
Electronics
Energy exchange
Energy transfer
Fabrication
Heavy ions
Java
krypton
linear energy transfer
Mathematical analysis
Nuclear physics
Performance evaluation
Silicon
Space technology
time-of-flight
Xenon
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Summary:Researchers performing radiation testing on electronic components often rely on semi-empirical prediction codes for determining the linear energy transfer (LET) (or electronic stopping force) of ions, without paying much attention to their reliability. However, it is seen that estimations calculated with different codes can have over 10% discrepancies, especially in the case of heavy ions with higher LET (e.g., xenon). As a consequence of the modern component fabrication techniques this has become an important issue when studying the radiation durability of electronics. In order to clarify this inconsistency, LET measurements for 131 Xe and 82 Kr in silicon have been undertaken and obtained results are presented, discussed and compared with earlier predicted data.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2007.895121