Physics-based compact model of nanoscale MOSFETs-Part I: transition from drift-diffusion to ballistic transport

In this paper, we present a physics-based analytical model for nanoscale MOSFETs that allows us to seamlessly cover the whole range of regimes from drift-diffusion (DD) to ballistic (B) transport, taking into account quantum confinement in the channel. In Part I we focus on MOSFETs with ultrathin bo...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2005-08, Vol.52 (8), p.1795-1801
Main Authors: Mugnaini, G., Iannaccone, G.
Format: Article
Language:English
Subjects:
Applied sciences
Ballistic transport
Chains
compact models
Drift
Electronics
Exact sciences and technology
Lambert
Mathematical analysis
Mathematical models
Molecular electronics, nanoelectronics
MOSFETs
nanoscale MOSFETs
Nanostructure
Quantum confinement
Semiconductor device modeling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Transport
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Summary:In this paper, we present a physics-based analytical model for nanoscale MOSFETs that allows us to seamlessly cover the whole range of regimes from drift-diffusion (DD) to ballistic (B) transport, taking into account quantum confinement in the channel. In Part I we focus on MOSFETs with ultrathin bodies, in which quantum confinement is structural rather than field-induced, and investigate in detail an analytical description of the transition from drift-diffusion to B transport based on the Bu/spl uml/ttiker approach to dissipative transport. We first start from the derivation of a closed form analytical expression of the Natori model for B MOSFETs, and show that a MOSFET with finite scattering length can be described as a suitable chain of B MOSFETs. Then, we are able to compact the behavior of the B chain in a simple analytical model. In the derivation, we also find a similarity between the B limit in the chain and the saturation velocity effect, that leads us to propose an alternative implementation of the saturation velocity effect in compact models.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2005.851827