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Tunable Kondo effect in graphene with defects
Although evidence indicates that defects induce magnetism in graphite, it’s unclear whether this extends to graphene. An observation of the gate-tunable Kondo effect in ion-beam-damaged graphene suggests it does. Graphene is a model system for the study of electrons confined to a strictly two-dimens...
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Published in: | Nature physics 2011-07, Vol.7 (7), p.535-538 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Although evidence indicates that defects induce magnetism in graphite, it’s unclear whether this extends to graphene. An observation of the gate-tunable Kondo effect in ion-beam-damaged graphene suggests it does.
Graphene is a model system for the study of electrons confined to a strictly two-dimensional layer
1
and a large number of electronic phenomena have been demonstrated in graphene, from the fractional
2
,
3
quantum Hall effect to superconductivity
4
. However, the coupling of conduction electrons to local magnetic moments
5
,
6
, a central problem of condensed-matter physics, has not been realized in graphene, and, given carbon’s lack of
d
or
f
electrons, magnetism in graphene would seem unlikely. Nonetheless, magnetism in graphitic carbon in the absence of transition-metal elements has been reported
7
,
8
,
9
, with explanations ranging from lattice defects
10
to edge structures
11
to negative curvature regions of the graphene sheet
12
. Recent experiments suggest that correlated defects in highly-ordered pyrolytic graphite (HOPG), induced by proton irradiation
8
or native to grain boundaries
7
, can give rise to ferromagnetism. Here we show that point defects (vacancies) in graphene
13
are local moments which interact strongly with the conduction electrons through the Kondo effect
6
,
14
,
15
,
16
, providing strong evidence that defects in graphene are indeed magnetic. The Kondo temperature
T
K
is tunable with carrier density from 30 to 90 K; the high
T
K
is a direct consequence of strong coupling of defects to conduction electrons in a Dirac material
16
. |
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ISSN: | 1745-2473 1745-2481 |
DOI: | 10.1038/nphys1962 |