The role of auger recombination in inas 1.3-μm quantum-dot lasers investigated using high hydrostatic pressure

• Published in: IEEE journal of selected topics in quantum electronics 2003-09, Vol.9 (5), p.1300-1307
• Main Authors: Marko, I.P., Andreev, A.D., Adams, A.R., Krebs, R., Reithmaier, J.P., Forchel, A.
• Format: Article
• Language: English
• Subjects: Augers; Hydrostatic pressure; Indium arsenides; Lasers; Photons; Quantum dots; Radiative recombination; Threshold currents
• ISSN: 1077-260X
• DOI: 10.1109/JSTQE.2003.819504

InAs quantum-dot (QD) lasers were investigated in the temperature range 20-300 K and under hydrostatic pressure in the range of 0-12 kbar at room temperature. The results indicate that Auger recombination is very important in 1.3- mu m QD lasers at room temperature and it is, therefore, the possible cause of the relatively low characteristic temperature observed, of T sub(0)=41K. In the 980-nm QD lasers where T sub(0)=110-130 K, radiative recombination dominates. The laser emission photon energy E sub(las) increases linearly with pressure p at 10.1 and 8.3 meV/kbar for 980 nm and 1.3- mu m QD lasers, respectively. For the 980-nm QD lasers the threshold current increases with pressure at a rate proportional to the square of the photon energy E super(2) sub(las). However, the threshold current of the 1.3- mu m QD laser decreases by 26% over a 12-kbar pressure range. This demonstrates the presence of a nonradiative recombination contribution to the threshold current, which decreases with increasing pressure. The authors show that this nonradiative contribution is Auger recombination. The results are discussed in the framework of a theoretical model based on the electronic structure and radiative recombination calculations carried out using an 88 k.p Hamiltonian.