Carrier Dynamics of Quantum-Dot, Quantum-Dash, and Quantum-Well Semiconductor Optical Amplifiers Operating at 1.55 [mu]m

• Published in: IEEE journal of quantum electronics 2007-11, Vol.43 (11), p.982-991
• Main Authors: Zilkie, A J, Meier, J, Mojahedi, M, Poole, P J, Barrios, P, Poitras, D, Rotter, T J, Yang, Chi, Stintz, A, Malloy, K J, Smith, P.W.E., Aitchison, J S
• Format: Article
• Language: English
• Subjects: Quantum dots
• ISSN: 0018-9197; 1558-1713
• DOI: 10.1109/JQE.2007.904474

We assess the influence of the degree of quantum confinement on the carrier recovery times in semiconductor optical amplifiers (SOAs) through an experimental comparative study of three amplifiers, one InAs-InGaAsP-InP quantum dot (0-D), one InAs-InAlGaAs-InP quantum dash (1-D), and one InGaAsP- In-GaAsP-InP quantum well (2-D), all of which operate near 1.55-mum wavelengths. The short-lived (around 1 ps) and long-lived (up to 2 ns) amplitude and phase dynamics of the three devices are characterized via heterodyne pump-probe measurements. The quantum-dot device is found to have the shortest long-lived gain recovery (approx. 80 ps) as well as gain and phase changes indicative of a smaller linewidth enhancement factor, making it the most promising for high-bit-rate applications. The quantum-dot amplifier is also found to have reduced ultrafast transients, due to a lower carrier density in the dots. The quantum-dot gain saturation characteristics and temporal dynamics also provide insight into the nature of the dot energy- level occupancy and the interactions of the dot states with the wetting layer.