Physics-Based Modeling of Hole Inversion-Layer Mobility in Strained-SiGe-on-Insulator

The hole inversion-layer mobility of strained-SiGe homo- and heterostructure-on-insulator in ultrathin-body MOSFETs is modeled by a microscopic approach. The subband structure of the quasi-2-D hole gas is calculated by solving the 6times6koarrldrpoarr Schrodinger equation self-consistently with the...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2007-09, Vol.54 (9), p.2174-2182
Main Authors: Pham, A.-T.., Jungemann, C.., Meinerzhagen, B..
Format: Article
Language:English
Subjects:
Calibration
Channels
Heterostructure strained-SiGe channel
Mathematical model
Mathematical models
Metal oxide semiconductors
mobility modeling
MOSFET circuits
MOSFETs
Optical scattering
Phonons
pMOSFET
Scattering
Schroedinger equation
Silicon
Silicon germanium
silicon-on-insulator (SOI)
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Summary:The hole inversion-layer mobility of strained-SiGe homo- and heterostructure-on-insulator in ultrathin-body MOSFETs is modeled by a microscopic approach. The subband structure of the quasi-2-D hole gas is calculated by solving the 6times6koarrldrpoarr Schrodinger equation self-consistently with the electrostatic potential. The model includes four important scattering mechanisms: optical phonon scattering, acoustic phonon scattering, alloy scattering, and surface-roughness scattering. The model parameters are calibrated by matching the measured low-field mobility of two particularly selected long-channel pMOSFET cases. The calibrated model reproduces available channel-mobility measurements for many different strained-SiGe-on-insulator structures. For the silicon-on-insulator MOS structures with unstrained-Si channels, the silicon-thickness dependence resulting from our model for the low-field channel mobility agrees with previous publications.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2007.902858