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Oxygen implantation and diffusion in pure titanium by an rf inductively coupled plasma
The superficial oxidation of pure titanium, 9 mm diameter, 5 mm thick disc samples by implantation and diffusion from inductively coupled plasmas is reported. Such rf plasmas were generated in a 15 l cylindrical Pyrex-like glass chamber containing pure circulating oxygen. A quarter wavelength soleno...
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Published in: | Vacuum 2009-05, Vol.83, p.S264-S267 |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The superficial oxidation of pure titanium, 9
mm diameter, 5
mm thick disc samples by implantation and diffusion from inductively coupled plasmas is reported. Such rf plasmas were generated in a 15
l cylindrical Pyrex-like glass chamber containing pure circulating oxygen. A quarter wavelength solenoidal antenna capable of transmitting 500
W at 13.54
MHz was externally wound around the chamber and connected to an rf generator capable of up to 1200
W through an automatic matching network. The oxidation process was carried out for 6
h periods while varying the gas pressure between 1
×
10
2 and 5
×
10
−1
Pa and the sample bias up to −3000
V DC. It was found that the sample temperature was a function both of the plasma density and the bias voltage. Without bias, the plasma heated the sample up to ∼200
°C, and with maximal bias voltage, the substrate was heated to 680
°C. At the latter temperature, the presence of the rutile phase was particularly evident in X-ray diffraction patterns. According to EDX data, the average oxygen to titanium ratio rose, from ∼0.06 for an untreated reference sample, to a ∼1.7 value for samples treated up to 680
°C. |
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ISSN: | 0042-207X 1879-2715 |
DOI: | 10.1016/j.vacuum.2009.01.078 |