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Oxygen implantation and diffusion in pure titanium by an rf inductively coupled plasma

The superficial oxidation of pure titanium, 9 mm diameter, 5 mm thick disc samples by implantation and diffusion from inductively coupled plasmas is reported. Such rf plasmas were generated in a 15 l cylindrical Pyrex-like glass chamber containing pure circulating oxygen. A quarter wavelength soleno...

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Bibliographic Details
Published in:Vacuum 2009-05, Vol.83, p.S264-S267
Main Authors: Valencia-Alvarado, R., de la Piedad-Beneitez, A., López-Callejas, R., Barocio, S.R., Mercado-Cabrera, A., Peña-Eguiluz, R., Muñoz-Castro, A.E., de la Rosa-Vázquez, J.
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Language:English
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Summary:The superficial oxidation of pure titanium, 9 mm diameter, 5 mm thick disc samples by implantation and diffusion from inductively coupled plasmas is reported. Such rf plasmas were generated in a 15 l cylindrical Pyrex-like glass chamber containing pure circulating oxygen. A quarter wavelength solenoidal antenna capable of transmitting 500 W at 13.54 MHz was externally wound around the chamber and connected to an rf generator capable of up to 1200 W through an automatic matching network. The oxidation process was carried out for 6 h periods while varying the gas pressure between 1 × 10 2 and 5 × 10 −1 Pa and the sample bias up to −3000 V DC. It was found that the sample temperature was a function both of the plasma density and the bias voltage. Without bias, the plasma heated the sample up to ∼200 °C, and with maximal bias voltage, the substrate was heated to 680 °C. At the latter temperature, the presence of the rutile phase was particularly evident in X-ray diffraction patterns. According to EDX data, the average oxygen to titanium ratio rose, from ∼0.06 for an untreated reference sample, to a ∼1.7 value for samples treated up to 680 °C.
ISSN:0042-207X
1879-2715
DOI:10.1016/j.vacuum.2009.01.078