Loading…

Photoelectrochemical studies on colloidal copper (I) oxide/modified with some organic semiconductors: Incentive for use of nanoparticle systems

Colloidal Cu 2 O solutions were used to explore photonic activities at the semiconductor/electrolyte interface. Fluorescence spectroscopic studies were performed on Cu 2 O colloidal particles modified with some conjugated organic monomers such as 2-amino-phenyl pyrrole (2-APPy), tri-phenyl amine (TP...

Full description

Saved in:
Bibliographic Details
Published in:Bulletin of materials science 2008-12, Vol.31 (7), p.925-929
Main Authors: Kasem, Kasem K., Davis, Carmen
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Colloidal Cu 2 O solutions were used to explore photonic activities at the semiconductor/electrolyte interface. Fluorescence spectroscopic studies were performed on Cu 2 O colloidal particles modified with some conjugated organic monomers such as 2-amino-phenyl pyrrole (2-APPy), tri-phenyl amine (TPA), or 2-thionyl pyrrole (2-Th-Py) to investigate the quantum absorbance efficiency at this inorganic/organic interface (IOI). Our study shows that colloidal p -type Cu 2 O possesses a bandgap with direct transition of ≈ 2·2 eV and indirect transition of 1·85 eV. The recorded rates of charge injection into colloidal Cu 2 O, k ct , were 2·31 × 10 9 s −1 , 5·05 × 10 8 s −1 , and 7·22 × 10 8 s −1 for 2-APPy, TPA and 2-Th-Py, respectively. The studied systems show more stability in colloidal form than in thin solid form. Results were interpreted using the optical and electrical parameters of the organic monomer such as ionization potential (IP), electron affinity (EA) and energy bandgap (Eg), and the barrier height at the IOI interface. Stability of the colloidal system is attributed to the physical dimensions of the photoactive system. The nano-colloidal particle offers a condition where its size is less than √Dt.
ISSN:0250-4707
0973-7669
DOI:10.1007/s12034-008-0147-5