Organic Pseudo-CMOS Circuits for Low-Voltage Large-Gain High-Speed Operation

• Published in: IEEE electron device letters 2011-10, Vol.32 (10), p.1448-1450
• Main Authors: Fukuda, K., Sekitani, T., Yokota, T., Kuribara, K., Huang, T., Sakurai, T., Zschieschang, U., Klauk, H., Ikeda, M., Kuwabara, H., Yamamoto, T., Takimiya, K., Kwang-Ting Cheng, Someya, T.
• Format: Article
• Language: English
• Subjects: Amplifiers; Applied sciences; Circuit properties; Circuits; Design for manufacture; Design. Technologies. Operation analysis. Testing; Devices; Dielectrics; Electric potential; Electric, optical and optoelectronic circuits; Electronic circuits; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Exact sciences and technology; Gain; Integrated circuits; Inverters; logic circuits; Logic gates; organic materials; organic thin-film transistors (TFTs); Oscillations; Oscillators, resonators, synthetizers; Propagation delay; Ring oscillators; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Tuning; Voltage
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2011.2161747

Pseudo-CMOS inverters operating at 2 V and comprising four p-type organic transistors with ultrahigh gain are fabricated using self-assembled monolayer gate dielectrics. The inverter gain is as large as 302 at an operation voltage of 2 V, whereas the minimum operation voltage is as small as 0.5 V. The oscillation frequency of a five-stage ring oscillator comprising pseudo-CMOS inverters is 4.27 kHz at 2 V, corresponding to 23.4 μs of propagation delay per stage. This is the fastest among organic circuits operating at low voltage. Pseudo-CMOS amplifier circuits show a large gain of 240 for a 3.0-mV input voltage.