Growth of p-Type Hematite by Atomic Layer Deposition and Its Utilization for Improved Solar Water Splitting

• Published in: Journal of the American Chemical Society 2012-03, Vol.134 (12), p.5508-5511
• Main Authors: Lin, Yongjing, Xu, Yang, Mayer, Matthew T, Simpson, Zachary I, McMahon, Gregory, Zhou, Sa, Wang, Dunwei
• Format: Article
• Language: English
• ISSN: 0002-7863; 1520-5126
• DOI: 10.1021/ja300319g

Mg-doped hematite (α-Fe2O3) was synthesized by atomic layer deposition (ALD). The resulting material was identified as p-type with a hole concentration of ca. 1.7 × 1015 cm–3. When grown on n-type hematite, the p-type layer was found to create a built-in field that could be used to assist photoelectrochemical water splitting reactions. A nominal 200 mV turn-on voltage shift toward the cathodic direction was measured, which is comparable to what has been measured using water oxidation catalysts. This result suggests that it is possible to achieve desired energetics for solar water splitting directly on metal oxides through advanced material preparations. Similar approaches may be used to mitigate problems caused by energy mismatch between water redox potentials and the band edges of hematite and many other low-cost metal oxides, enabling practical solar water splitting as a means for solar energy storage.