Reduced crystallization time of YBCO in a fluorine-free MOD process using uv-lamp irradiation

► Crystallization of epitaxial YBCO films was shortened by a uv-lamp in a MOD process. ► Jc, XRD, and SEM were employed for the investigation of crystallization behavior. ► 0.8 micron-thick film was synthesized within 10 min of heating. We have studied the crystallization time dependence of the epit...

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Bibliographic Details
Published in:Physica. C, Superconductivity Superconductivity, 2011-11, Vol.471 (21-22), p.960-962
Main Authors: Matsui, H., Tsukada, K., Tsuchiya, T., Sohma, M., Yamaguchi, I., Kumagai, T., Manabe, T.
Format: Article
Language:English
Subjects:
COPPER OXIDE
Crystallization
Crystallization behavior
DEPOSITION
Epitaxial growth
FLUORINE COMPOUNDS
HEAT TREATING
Heat treatment
IRRADIATION
Metal–organic deposition
Morphology
RADIATION
SCANNING ELECTRON MICROSCOPY
SUPERCONDUCTIVITY
SUPERCONDUCTORS
YBCO
YBCO superconductors
YTTRIUM OXIDE
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Summary:► Crystallization of epitaxial YBCO films was shortened by a uv-lamp in a MOD process. ► Jc, XRD, and SEM were employed for the investigation of crystallization behavior. ► 0.8 micron-thick film was synthesized within 10 min of heating. We have studied the crystallization time dependence of the epitaxial YBCO films (t=0.8μm) grown on CeO2-buffered SrTiO3 substrates by fluorine-free metal–organic deposition using uv-lamp irradiation (uv-MOD). As increasing the time (T0) for heat treatment at the reaction temperature (760°C) from 0 to 90min, Jc and the YBCO 00l XRD intensity are steeply increased and reach their maximum values at T0=10min. This suggests that the heat treatment required for YBCO crystallization is significantly shortened in uv-MOD compared to conventional all-pyrolytic F-free MOD processes, which consume T0=90–150min for crystallizing 0.4–0.5-μm-thick films. Scanning electron microscope measurement revealed a drastic change in surface morphology between T0=8 and 10min, showing a good correspondence to the Jc and XRD data which suggest that the epitaxial growth reaches the film surface at the very early stage in the heat treatment.
ISSN:0921-4534
1873-2143
DOI:10.1016/j.physc.2011.05.099