Formation of epitaxial 3C-SiC layers by microwave plasma-assisted carbonization

• Published in: Surface & coatings technology 2011-11, Vol.206 (5), p.990-993
• Main Authors: Kato, Yoshimine, Goto, Masaki, Sato, Ryota, Yamada, Kazuhiro, Koga, Akira, Teii, Kungen, Srey, Chenda, Tanaka, Satoru
• Format: Article
• Language: English
• Subjects: Carbon; Carbonization; Cross-disciplinary physics: materials science; rheology; Diffraction; Diode; Epitaxial growth; Exact sciences and technology; Materials science; Microwave plasma; Nanocrystalline diamond; Physics; Reflection; SiC; Silicon carbide; Silicon substrates; Surface treatments; X-rays
• ISSN: 0257-8972; 1879-3347
• DOI: 10.1016/j.surfcoat.2011.04.021

Epitaxial 3C-SiC ( β-SiC) thin layers are grown on Si (001) substrates by carbonization in moderate-pressure microwave plasmas, typically used for diamond film deposition. The substrate temperature and the CH 4 gas concentration diluted in H 2 gas are varied from 1000 to 1200 °C and from 2 to 8 vol.%, respectively. The grown layers are characterized by scanning electron microscopy, Raman spectroscopy, x-ray diffraction, Fourier transform infrared spectroscopy, reflection high energy electron diffraction, and energy-dispersive x-ray spectroscopy . For 2% CH 4, epitaxial 3C-SiC about 10 nm thick is grown only when the temperature is increased to 1200 °C, while polycrystalline 3C-SiC is grown for temperatures less than 1200 °C. For 8% CH 4, epitaxial 3C-SiC is grown even for temperatures less than 1200 °C, but the thickness of the SiC layer is reduced. Some amounts of amorphous carbon and diamond phases are found to grow on the SiC layers. ► 3C-SiC layers are grown on Si (001) substrates by microwave plasmas. ► For 2%CH 4, epitaxial 3C-SiC about 10 nm thick is grown at temperature of 1200 °C. ► For 8%CH 4, epitaxial 3C-SiC is grown even for temperatures less than 1200 °C. ► Some amorphous carbon and diamond phases are found to grow on the SiC layers.