Non-ohmic behavior of carrier transport in highly disordered graphene

We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By applying a high source-drain voltage, Vsd, we are able to study the current-voltage relation I-Vsd of our device. With increasing Vsd, a crossover from the linear I-Vsd regime to the non-...

Full description

Saved in:
Bibliographic Details
Published in:Nanotechnology 2013-04, Vol.24 (16), p.165201-165201
Main Authors: Lo, Shun-Tsung, Chuang, Chiashain, Puddy, R K, Chen, T-M, Smith, C G, Liang, C-T
Format: Article
Language:English
Subjects:
Carrier transport
Carriers
Charging
Cross-disciplinary physics: materials science
rheology
Electric fields
Electric potential
Exact sciences and technology
Fullerenes and related materials
diamonds, graphite
Graphene
Magnetic fields
Materials science
Physics
Specific materials
Voltage
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By applying a high source-drain voltage, Vsd, we are able to study the current-voltage relation I-Vsd of our device. With increasing Vsd, a crossover from the linear I-Vsd regime to the non-linear one, and eventually to activationless-hopping transport occurs. In the activationless-hopping regime, the importance of Coulomb interactions between charged carriers is demonstrated. Moreover, we show that delocalization of carriers which are strongly localized at low T and at small Vsd occurs in the presence of high electric field and perpendicular magnetic field.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/24/16/165201