Localized surface plasmon resonance frequency tuning in highly doped InAsSb/GaSb one-dimensional nanostructures

• Published in: Nanotechnology 2016-10, Vol.27 (42), p.425201
• Main Authors: Milla, M J, Barho, F, González-Posada, F, Cerutti, L, Bomers, M, Rodriguez, J-B, Tournié, E, Taliercio, T
• Format: Article
• Language: English
• Subjects: Electronics; Engineering Sciences; highly doped semiconductors; localized surface plamons; mid-infrared; nanoribbons; sensing
• ISSN: 0957-4484; 1361-6528
• DOI: 10.1088/0957-4484/27/42/425201

We report a detailed analysis of the influence of the doping level and nanoribbon width on the localized surface plasmon resonance (LSPR) by means of reflectance measurements. The plasmonic system, based on one-dimensional periodic gratings of highly Si-doped InAsSb/GaSb semiconductor nanostructures, is fabricated by a simple, accurate and large-area technique fabrication. Increasing the doping level blueshifts the resonance peak while increasing the ribbon width results in a redshift, as confirmed by numerical simulations. This provides an efficient means of fine-tuning the LSPR properties to a target purpose of between 8-20 m (1250−500 cm−1). Finally, we show surface plasmon resonance sensing to absorbing polymer layers. We address values of the quality factor, sensitivity and figure of merit of 16 700 nm RIU-1 and 2.5, respectively. These results demonstrate Si-doped InAsSb/GaSb to be a low-loss/high sensitive material making it very promising for the development of biosensing devices in the mid-infrared.