A 2D material-based floating gate device with linear synaptic weight update

Neuromorphic computing is of great interest among researchers interested in overcoming the von Neumann computing bottleneck. A synaptic device, one of the key components to realize a neuromorphic system, has a weight that indicates the strength of the connection between two neurons, and updating thi...

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Bibliographic Details
Published in:Nanoscale 2020-12, Vol.12 (48), p.2453-2459
Main Authors: Park, Eunpyo, Kim, Minkyung, Kim, Tae Soo, Kim, In Soo, Park, Jongkil, Kim, Jaewook, Jeong, YeonJoo, Lee, Suyoun, Kim, Inho, Park, Jong-Keuk, Kim, Gyu Tae, Chang, Jiwon, Kang, Kibum, Kwak, Joon Young
Format: Article
Language:English
Subjects:
Aluminum oxide
Computation
Flash memory (computers)
Graphene
Memory devices
Neural networks
Transistors
Two dimensional materials
Weight
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Summary:Neuromorphic computing is of great interest among researchers interested in overcoming the von Neumann computing bottleneck. A synaptic device, one of the key components to realize a neuromorphic system, has a weight that indicates the strength of the connection between two neurons, and updating this weight must have linear and symmetric characteristics. Especially, a transistor-type device has a gate terminal, separating the processes of reading and updating the conductivity, used as a synaptic weight to prevent sneak path current issues during synaptic operations. In this study, we fabricate a top-gated flash memory device based on two-dimensional (2D) materials, MoS 2 and graphene, as a channel and a floating gate, respectively, and Al 2 O 3 and HfO 2 to increase the tunneling efficiency. We demonstrate the linear weight updates and repeatable characteristics of applying negative/positive pulses, and also emulate spike timing-dependent plasticity (STDP), one of the learning rules in a spiking neural network (SNN). A three-terminal top-gated flash device based on two-dimensional materials with a high coupling ratio exhibits highly linear synaptic weight updates.
ISSN:2040-3364
2040-3372
DOI:10.1039/d0nr07403a