Electronic structures of Zn 1− x Ga x O 1− x N x and band offsets of the ZnO/Zn 1− x Ga x O 1− x N x heterojunction across the entire concentration range from first principles
Band offsets at the heterointerfaces play a key role in defining the functionality of optoelectronic devices. In this work, the band gaps of wurtzite Zn 1− x Ga x O 1− x N x alloys and the band offsets of the lattice matched ZnO/Zn 1− x Ga x O 1− x N x heterojunction across the entire concentration...
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| Published in: | Physical chemistry chemical physics : PCCP 2021-12, Vol.24 (1), p.375-381 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Citations: | Items that this one cites |
| Online Access: | Get full text |
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