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Interface engineering of 0D/2D Cu 2 O/BiOBr Z-scheme heterojunction for efficient degradation of sulfamethoxazole: Mechanism, degradation pathway, and DFT calculation
Constructed heterojunction has been considered an efficient strategy to enhance the migration and transfer of photoinduced charge carriers. Herein, a Z-scheme Cu O/BiOBr heterojunction with 0D/2D structure was fabricated by microwave hydrothermal method. It was found that the optimal composites phot...
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Published in: | Chemosphere (Oxford) 2024-01, Vol.346, p.140596 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
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Summary: | Constructed heterojunction has been considered an efficient strategy to enhance the migration and transfer of photoinduced charge carriers. Herein, a Z-scheme Cu
O/BiOBr heterojunction with 0D/2D structure was fabricated by microwave hydrothermal method. It was found that the optimal composites photocatalyst showed excellent activity for sulfamethoxazole (SMZ) illumination, and the removal rate reached 90.7%, which was higher than pristine Cu
O (53.0%) and BiOBr (60.0%). Subsequently, the operational parameters such as catalyst dosage, concentrations of pollutants, and pH of solution were investigated. According to the ultraviolet-visible diffuse reflectance spectroscopy (UV-Vis DRs), Mott-Schottky curve, and density functional theory (DFT) analysis, the Z-scheme degradation mechanism of Cu
O/BiOBr heterostructure was proposed. Among them, the interface structure of 0-dimensions/2-dimensions (0D/2D) can significantly increase the number of heterojunctions in the composite catalyst, and Z-scheme heterostructures can accelerate the generation and migration of photoinduced charge carriers, which has a facilitation effect on improving the decomposition activity of the photocatalyst. Moreover, three possible pathways for SMZ degradation were inferred. This study provides a promising strategy for constructing novel heterojunctions with high photocatalytic performance. |
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ISSN: | 1879-1298 |