An interfacial C-S bond bridged S-scheme ZnS/C 3 N 5 for photocatalytic H 2 evolution: Opposite internal-electric-field of ZnS/C 3 N 4 , increased field strength, and accelerated surface reaction

• Published in: Journal of colloid and interface science 2024-06, Vol.664, p.960
• Main Authors: Ma, Shouchun, Yang, Dong, Li, Bing, Guan, Yina, Wu, Maoquan, Wu, Jie, Guo, Yongmei, Sheng, Li, Liu, Li, Yao, Tongjie
• Format: Article
• Language: English
• ISSN: 1095-7103

An interfacial C-S bond bridged ZnS/C N heterojunction was constructed for photocatalytic H evolution. Different from traditional type-II ZnS/C N heterojunction, the electron transfer followed S-scheme pathway, due to opposite internal-electric-field (IEF) directions in these two heterojunctions. The C-S bond formation was carefully investigated, and they were susceptive to the preparation temperatures. In photocatalytic reaction, C-S bond was functioned as the "high-speed channel" for electron separation and transfer, and the IEF strength in ZnS/C N was 1.86 × 10 V/m, 2.6 times higher than that in ZnS/C N . Moreover, the C-S bond also altered the surface molecular structure of ZnS/C N , and hence the surface reaction was accelerated via improving H O adsorption and activation behaviors. Benefiting from the S-scheme pathway, enhanced IEF strength, and accelerated surface reaction, the photocatalytic H production over ZnS/C N reached up to 20.18 mmol/g/h, 3.2 and 2.5 times higher than those of ZnS/C N and ZnS/C N -300 without C-S bond.