AFORS-HET-based numerical exploration of tunnel oxide passivated contact solar cells incorporating n- and p-type silicon substrates

• Published in: RSC advances 2024-07, Vol.14 (31), p.22253-22265
• Main Authors: Saeed, Rabia, Tahir, Sofia, Ali, Adnan, Albalawi, Hind, Ashfaq, Arslan
• Format: Article
• Language: English
• Subjects: Carrier recombination; Chemistry; Current carriers; Doping; Emitters; Open circuit voltage; Parameters; Performance enhancement; Performance evaluation; Photovoltaic cells; Polysilicon; Silicon substrates; Solar cells; Thickness; Tunnels
• ISSN: 2046-2069; 2046-2069
• DOI: 10.1039/d4ra03286a

The development of a tunnel oxide interfacial layer capped by a highly doped poly-Si layer is considered one of the most promising methods to reduce charge carrier recombination and improve the performance of conventional PERC devices. The thickness and doping concentration of emitters and BSF layers greatly influence the tunnelling current in TOPCon devices. In this research, we evaluated the performance of tunnel oxide passivated contact (TOPCon) solar cells by conducting an in-depth analysis of various key parameters. The parameter include the type of silicon substrate (n or p-type); the thickness and doping density ( N a / N d ) of n, n + , p, and p + layers; and surface recombination velocity (front/rear), which were analyzed using AFORS-HET simulation software. A comparative analysis of performance demonstrates that the highest efficiency is achieved in the n-TOPCon solar cell with the following values: V oc = 660.2 mV, J sc = 45.05 mA cm −2 , FF = 82.87%, and PCE = 25.74%. In the optimized p-TOPCon solar cell, the open circuit voltage ( V oc ) and fill factor (FF) exhibit improvements of 35.9 mV and 0.39%, respectively. However, the values of J sc and PCE decrease by 6.44 mA cm −2 and 2.2%, respectively, in p-TOPCon solar cells. Furthermore, photo-electroluminescence analysis reveals that the n-TOPCon solar cells exhibit a higher maximum photon flux (front/rear) than p-TOPCon solar cells. The development of a tunnel oxide interfacial layer capped by a highly doped poly-Si layer is considered one of the most promising methods to reduce charge carrier recombination and improve the performance of conventional PERC devices.