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Switchable topological polar states in epitaxial BaTiO 3 nanoislands on silicon
A fascinating aspect of nanoscale ferroelectric materials is the emergence of topological polar textures, which include various complex and stable polarization configurations. The manipulation of such topological textures through external stimuli like electric fields holds promise for advanced nanoe...
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Published in: | Nature communications 2024-11, Vol.15 (1), p.10047 |
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Main Authors: | , , , , , , , , , , |
Format: | Article |
Language: | English |
Online Access: | Get full text |
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Summary: | A fascinating aspect of nanoscale ferroelectric materials is the emergence of topological polar textures, which include various complex and stable polarization configurations. The manipulation of such topological textures through external stimuli like electric fields holds promise for advanced nanoelectronics applications. There are, however, several challenges to reach potential applications, among which reliably creating and controlling these textures at the nanoscale on silicon, and with lead-free compounds. We report the realization of epitaxial BaTiO
nanoislands on silicon, with a lateral size as small as 30-60 nm, and demonstrate stable center down-convergent polarization domains that can be reversibly switched by an electric field to center up-divergent domains. Piezoresponse force microscopy data reconstruction and phase field modeling give insight into the 3D patterns. The trapezoidal-shape nanoislands give rise to center down-convergent lateral swirling polarization component with respect to the nanoisland axis, which prevents the formation of bound charges on the side walls, therefore minimizing depolarization fields. The texture resembles a swirling vortex of liquid flowing into a narrowing funnel. Chirality emerges from the whirling polarization configurations. The ability to create and electrically manipulate chiral whirling polar textures in BaTiO
nanostructures grown monolithically on silicon holds promise for applications in future topological nanoelectronics. |
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ISSN: | 2041-1723 |