Artifact-Free Microstructures in the Interfacial Reaction between Eutectic In-48Sn and Cu Using Ion Milling

• Published in: Materials 2023-04, Vol.16 (9), p.3290
• Main Authors: Chang, Fu-Ling, Lin, Yu-Hsin, Hung, Han-Tang, Kao, Chen-Wei, Kao, C R
• Format: Article
• Language: English
• Subjects: Aging; Alloys; Copper; Ductility; Electron diffraction; Eutectic reactions; Hardness; Interface reactions; Intermetallic compounds; Investigations; Low temperature; Mechanical polishing; Mechanical properties; Melting points; Microstructure; Modulus of elasticity; Morphology; Packaging; Packaging machinery; Quantitative analysis; Room temperature; Scanning electron microscopy; Silicon carbide; Soldering; Tin
• ISSN: 1996-1944; 1996-1944
• DOI: 10.3390/ma16093290

Eutectic In-48Sn was considered a promising candidate for low-temperature solder due to its low melting point and excellent mechanical properties. Both Cu (In,Sn) and Cu(In,Sn) formation were observed at the In-48Sn/Cu interface after 160 °C soldering. However, traditional mechanical polishing produces many defects at the In-48Sn/Cu interface, which may affect the accuracy of interfacial reaction investigations. In this study, cryogenic broad Ar beam ion milling was used to investigate the interfacial reaction between In-48Sn and Cu during soldering. The phase Cu (Sn,In) was confirmed as the only intermetallic compound formed during 150 °C soldering, while Cu(In,Sn) formation was proven to be caused by room-temperature aging after soldering. Both the Cu (Sn,In) and Cu(In,Sn) phases were confirmed by EPMA quantitative analysis and TEM selected area electron diffraction. The microstructure evolution and growth mechanism of Cu (Sn,In) during soldering were proposed. In addition, the Young's modulus and hardness of Cu (Sn,In) were determined to be 119.04 ± 3.94 GPa and 6.28 ± 0.13 GPa, respectively, suggesting that the doping of In in Cu (Sn,In) has almost no effect on Young's modulus and hardness.