Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide

• Published in: Scientific reports 2014-07, Vol.4 (1), p.5303-5303, Article 5303
• Main Authors: Kraus, H., Soltamov, V. A., Fuchs, F., Simin, D., Sperlich, A., Baranov, P. G., Astakhov, G. V., Dyakonov, V.
• Format: Article
• Language: English
• Subjects: 639/766/119; 639/766/483; Biosensing Techniques; Carbon Compounds, Inorganic - chemistry; Defects; Electron Spin Resonance Spectroscopy; Humanities and Social Sciences; Magnetic Fields; Magnetometry; multidisciplinary; Nanotechnology; Quantum Theory; Science; Silicon; Silicon carbide; Silicon Compounds - chemistry; Splitting; Temperature; Temperature effects
• ISSN: 2045-2322; 2045-2322
• DOI: 10.1038/srep05303

Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very attractive in this respect because of the technological advantages of this material and favorable optical and radio frequency spectral ranges to control these defects. We identified several, separately addressable spin-3/2 centers in the same silicon carbide crystal, which are immune to nonaxial strain fluctuations. Some of them are characterized by nearly temperature independent axial crystal fields, making these centers very attractive for vector magnetometry. Contrarily, the zero-field splitting of another center exhibits a giant thermal shift of −1.1 MHz/K at room temperature, which can be used for thermometry applications. We also discuss a synchronized composite clock exploiting spin centers with different thermal response.