New Insights into Intrinsic Point Defects in V2VI3 Thermoelectric Materials

• Published in: Advanced science 2016-07, Vol.3 (7), p.1600004-n/a
• Main Authors: Zhu, Tiejun, Hu, Lipeng, Zhao, Xinbing, He, Jian
• Format: Article
• Language: English
• Subjects: Bi2Te3; defect engineering; intrinsic point defects; Review; Reviews; thermoelectric properties; V2VI3 semiconductors
• ISSN: 2198-3844; 2198-3844
• DOI: 10.1002/advs.201600004

Defects and defect engineering are at the core of many regimes of material research, including the field of thermoelectric study. The 60‐year history of V2VI3 thermoelectric materials is a prime example of how a class of semiconductor material, considered mature several times, can be rejuvenated by better understanding and manipulation of defects. This review aims to provide a systematic account of the underexplored intrinsic point defects in V2VI3 compounds, with regard to (i) their formation and control, and (ii) their interplay with other types of defects towards higher thermoelectric performance. We herein present a convincing case that intrinsic point defects can be actively controlled by extrinsic doping and also via compositional, mechanical, and thermal control at various stages of material synthesis. An up‐to‐date understanding of intrinsic point defects in V2VI3 compounds is summarized in a (χ, r)‐model and applied to elucidating the donor‐like effect. These new insights not only enable more innovative defect engineering in other thermoelectric materials but also, in a broad context, contribute to rational defect design in advanced functional materials at large. A systematic account of the intrinsic point defects, such as antisite defects and vacancites, in V2VI3 based compounds, is given with regard to their formation and control, and their interplay with other types of defects. These insights provide guidance towards higher thermoelectric performance, contributing to rational defect design in advanced thermoelectric materials and topological insulators.