High-Mobility and High-Optical Quality Atomically Thin WS2

The rise of atomically thin materials has the potential to enable a paradigm shift in modern technologies by introducing multi-functional materials in the semiconductor industry. To date the growth of high quality atomically thin semiconductors (e.g. WS 2 ) is one of the most pressing challenges to...

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Bibliographic Details
Published in:Scientific reports 2017-11, Vol.7 (1)
Main Authors: Reale, Francesco, Palczynski, Pawel, Amit, Iddo, Jones, Gareth F., Mehew, Jake D., Bacon, Agnes, Ni, Na, Sherrell, Peter C., Agnoli, Stefano, Craciun, Monica F., Russo, Saverio, Mattevi, Cecilia
Format: Article
Language:English
Subjects:
140/125
140/133
140/146
639/301/1005/1007
639/301/357/1018
639/638/549/2264
Humanities and Social Sciences
multidisciplinary
Science
Science (multidisciplinary)
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Summary:The rise of atomically thin materials has the potential to enable a paradigm shift in modern technologies by introducing multi-functional materials in the semiconductor industry. To date the growth of high quality atomically thin semiconductors (e.g. WS 2 ) is one of the most pressing challenges to unleash the potential of these materials and the growth of mono- or bi-layers with high crystal quality is yet to see its full realization. Here, we show that the novel use of molecular precursors in the controlled synthesis of mono- and bi-layer WS 2 leads to superior material quality compared to the widely used direct sulfidization of WO 3 -based precursors. Record high room temperature charge carrier mobility up to 52 cm 2 /Vs and ultra-sharp photoluminescence linewidth of just 36 meV over submillimeter areas demonstrate that the quality of this material supersedes also that of naturally occurring materials. By exploiting surface diffusion kinetics of W and S species adsorbed onto a substrate, a deterministic layer thickness control has also been achieved promoting the design of scalable synthesis routes.
ISSN:2045-2322
DOI:10.1038/s41598-017-14928-2