Volume Fabrication of Quantum Cascade Lasers on 200 mm-CMOS pilot line

The manufacturing cost of quantum cascade lasers is still a major bottleneck for the adoption of this technology for chemical sensing. The integration of Mid-Infrared sources on Si substrate based on CMOS technology paves the way for high-volume low-cost fabrication. Furthermore, the use of Si-based...

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Bibliographic Details
Published in:Scientific reports 2020-04, Vol.10 (1), p.6185-6185, Article 6185
Main Authors: Coutard, J. G, Brun, M., Fournier, M., Lartigue, O., Fedeli, F., Maisons, G., Fedeli, J. M, Nicoletti, S., Carras, M., Duraffourg, L.
Format: Article
Language:English
Subjects:
639/624
639/925
Chemical perception
Chemoreception
Fabrication
Humanities and Social Sciences
Integration
Lasers
multidisciplinary
Science
Science (multidisciplinary)
Silicon
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Summary:The manufacturing cost of quantum cascade lasers is still a major bottleneck for the adoption of this technology for chemical sensing. The integration of Mid-Infrared sources on Si substrate based on CMOS technology paves the way for high-volume low-cost fabrication. Furthermore, the use of Si-based fabrication platform opens the way to the co-integration of QCL Mid-InfraRed sources with SiGe-based waveguides, enabling realization of optical sensors fully integrated on planar substrate. We report here the fabrication and the characterization of DFB-QCL sources using top metal grating approach working at 7.4 µm fully implemented on our 200 mm CMOS pilot line. These QCL featured threshold current density of 2.5 kA/cm² and a linewidth of 0.16 cm −1 with a high fabrication yield. This approach paves the way toward a Mid-InfraRed spectrometer at the silicon chip level.
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-020-63106-4