Local defect-induced red-shift of cathodoluminescence in individual ZnS nanobelts

The luminescence of semiconductor nanostructures is strongly dependent on their size, dimensions, morphology, composition, or defects, and their band emissions can be properly and selectively tailored through the rational manipulation of these parameters during material growth. Using spatially-resol...

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Bibliographic Details
Published in:Nanoscale 2014-11, Vol.6 (21), p.12414-1242
Main Authors: Liu, B. D, Yang, B, Dierre, B, Sekiguchi, T, Jiang, X
Format: Article
Language:English
Subjects:
Cathodoluminescence
Defects
Emission spectroscopy
Nanostructure
Semiconductors
Stacking faults
Wurtzite
Zinc sulfides
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Summary:The luminescence of semiconductor nanostructures is strongly dependent on their size, dimensions, morphology, composition, or defects, and their band emissions can be properly and selectively tailored through the rational manipulation of these parameters during material growth. Using spatially-resolved cathodoluminescence spectroscopy, monochromatic contrast maps and high-resolution transmission electron microscopy, an obvious red-shift of the near-band-edge emission of wurtzite ZnS nanobelts, resulting from a strip of stacking faults or a zinc-blende phase with tens of atomic layers in width, has been observed and its related mechanism has been discussed. This finding is not specific to the defect-dependent optical properties tailoring of ZnS nanostructures and represents a general validity for clarifying the mechanism of peak-shift (band-gap expansion or shrinking) of a wide range of semiconductor nanostructures with various defects. In addition, the general formation mechanism of the belt-like nanostructure was proposed based on precise microstructure analyses on a ZnS nanobelt with atomic terrace growth fronts. Local defect-induced red-shift of cathodoluminescence in individual ZnS nanobelts has been observed using a high-resolution spatially-resolved CL technique. Structural defects such as strip stacking faults and the heterostructure area with a size of 10-20 nm are responsible for luminescence difference.
ISSN:2040-3364
2040-3372
DOI:10.1039/c4nr04464a