Deposition and application of a Mo-N back contact diffusion barrier yielding a 12.0% efficiency solution-processed CIGS solar cell using an amine-thiol solvent system

Delamination and high series resistance due to excessively thick MoSe 2 are commonly found in solution-processed CIGS solar cells. This work shows the effective functionality of Mo-N as a back contact barrier against selenium diffusion during high temperature selenization. Mo-N barrier layers are de...

Full description

Saved in:
Bibliographic Details
Published in:Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2019, Vol.7 (12), p.742-752
Main Authors: Uli ná, So a, Arnou, Panagiota, Abbas, Ali, Togay, Mustafa, Welch, Liam M, Bliss, Martin, Malkov, Andrei V, Walls, John M, Bowers, Jake W
Format: Article
Language:English
Subjects:
Adhesive strength
Barrier layers
Conversion coating
Copper indium gallium selenides
Diffusion barriers
Diffusion layers
Energy conversion efficiency
High temperature
Magnetron sputtering
Molybdenum compounds
Photovoltaic cells
Selenium
Solar cells
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Delamination and high series resistance due to excessively thick MoSe 2 are commonly found in solution-processed CIGS solar cells. This work shows the effective functionality of Mo-N as a back contact barrier against selenium diffusion during high temperature selenization. Mo-N barrier layers are deposited by reactive D.C. magnetron sputtering. The Mo-N barrier layer significantly reduces MoSe 2 formation at the Mo/CIGS interface and consequently improves adhesion properties and enhances crystallinity of the CIGS absorber. The power conversion efficiency (PCE) of a spray-coated diamine-dithiol based CIGS solar cell improved from our previously published 9.8% to 12.0% after application of the Mo-N back contact barrier layer. The use of a Mo-N barrier for solution-processed CIGS results in reduced MoSe 2 formation. This enabled longer selenization time, enhanced grain growth and performance.
ISSN:2050-7488
2050-7496
DOI:10.1039/c8ta12089g