Synthesis of 2D MoSSe semiconductor alloy by chemical vapor deposition

• Published in: RSC advances 2020-11, Vol.1 (69), p.42172-42177
• Main Authors: Yao, Wenwen, Kang, Zhilin, Deng, Jiajun, Chen, Yan, Song, Qian, Ding, Xun Lei, Lu, Fangchao, Wang, Wenjie
• Format: Article
• ISSN: 2046-2069
• DOI: 10.1039/d0ra07776c

Alloying/doping in two-dimensional (2D) materials is emerging as an increasingly important strategy due to the wide-range bandgap tunability and versatility of these materials. Monolayer 2D transition metal dichalcogenide (TMD) alloy has been investigated both theoretically and experimentally in recent years. Here, we synthesized a bilayer MoS 2(1− x ) Se 2 x semiconductor alloy via the chemical-vapor deposition technique. The as-grown triangular MoS 2(1− x ) Se 2 x flakes with size of roughly 10 μm were observed by optical microscope and scanning electron microscope (SEM). The 1.4-1.9 nm thickness of the samples, as measured by AFM, means that bilayer MoS 2(1− x ) Se 2 x alloys were grown. The characteristic Raman modes related to Mo-S and Mo-Se vibrations were observed in the Raman spectrum. Two emission peaks were respectively found, corresponding to the A and B excitons in the photoluminescence (PL) spectrum. XPS measurements confirmed the Se doping of the alloy. The first-principles calculation results show a contraction of the band gap value with the increase of Se doping in the MoS 2 lattice. Compared with monolayer MoS 2(1− x ) Se 2 x alloy, the band bending effect is more obvious, and the bilayer MoS 2(1− x ) Se 2 x alloy still shows the direct band gap luminescence characteristic, which has certain guiding significance for the growth of two-dimensional materials and for device preparation. Alloying/doping in two-dimensional (2D) materials is emerging as an increasingly important strategy due to the wide-range bandgap tunability and versatility of these materials.