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Parametric scheme for rapid nanopattern replication electrohydrodynamic instability

Electrohydrodynamic (EHD) instability patterning exhibits substantial potential for application as a next-generation lithographic technique; nevertheless, its development continues to be hindered by the lack of process parameter controllability, especially when replicating sub-microscale pattern fea...

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Bibliographic Details
Published in:RSC advances 2021-05, Vol.11 (3), p.18152-18161
Main Authors: Hwang, Jaeseok, Park, Hyunje, Lee, Jaejong, Kang, Dae Joon
Format: Article
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Summary:Electrohydrodynamic (EHD) instability patterning exhibits substantial potential for application as a next-generation lithographic technique; nevertheless, its development continues to be hindered by the lack of process parameter controllability, especially when replicating sub-microscale pattern features. In this paper, a new parametric guide is introduced. It features an expanded range of valid parameters by increasing the pattern growth velocity, thereby facilitating reproducible EHD-driven patterning for perfect nanopattern replication. Compared with conventional EHD-driven patterning, the rapid patterning approach not only shortens the patterning time but also exhibits enhanced scalability for replicating small and geometrically diverse features. Numerical analyses and simulations are performed to elucidate the interplay between the pattern growth velocity, fidelity of the replicated features, and boundary between the domains of suitable and unsuitable parametric conditions in EHD-driven patterning. The developed rapid route facilitates nanopattern replication using EHD instability with a wide range of suitable parameters and further opens up many opportunities for device applications using tailor-made nanostructures in an effective and straightforward manner. 1/ τ m -dependent electrohydrodynamic replication of a hexagonally ordered hole array nanopattern by adjusting the filling ratio. As the 1/ τ m increases, the morphology evolves into the perfectly replicated hole features with increasing filling ratio.
ISSN:2046-2069
DOI:10.1039/d1ra01728d