Double layer based electronic nanodevices fabricatedon silicon nanoneedles

• Published in: Journal of applied physics 2006-10, Vol.100 (8), p.084329-084329-8
• Main Authors: Joshkin, V., Lagally, M., van der Weide, D.
• Format: Article
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.2356022

For many years science and industry have exploited the transport properties of electrons in different apparatus called electronic devices. We suggested and investigated the nanodevices based on the proton's ability to carry a charge. The electrochemical model of the device has been presented and verified by experiments. The device comprises a Schottky nanodiode, which is formed by two electrodes immersed in electrolyte (one of the electrodes is a metal film and another is a silicon nanoneedle directed perpendicular to the first electrode), and two double layer capacitors that surround these electrodes. The oppositely charged double layers create a transition region localized at the nanoneedle tip where the layers touch each other. Analysis of the experimental data reveals that the curvature of the nanoneedle electrode and the width of the transition region effect a proton current, which is a major electrical current component in the electrolyte applied, and determine a "built-in" variation of the Gibbs free energy of ionic carriers across the transition region. Different types of soft and liquid electrolytes have been investigated. We show that the suggested device can be used as a sensitive infrared photodiode, memory cell, and an electronic driven hydrogen ion device.