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Nonequilibrium drift-diffusion transport in semiconductorsin presence of strong inhomogeneous electric fields
The self-consistent analysis of drift-diffusion transport in strong inhomogeneous electric fields shows that the local mobility is determined by the "field parameter" f ( r ) = ∇ r E c ( r ) ∙ ∇ r E F ( r ) , rather than the electric field ∇ r E c ( r ) ∕ e or the quasi-Fermi potential gra...
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| Published in: | Applied physics letters 2006-12, Vol.89 (25), p.252112-252112-3 |
|---|---|
| Main Author: | |
| Format: | Article |
| Language: | |
| Citations: | Items that this one cites |
| Online Access: | Get full text |
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| Summary: | The self-consistent analysis of drift-diffusion transport in strong inhomogeneous electric fields shows that the local mobility is determined by the "field parameter"
f
(
r
)
=
∇
r
E
c
(
r
)
∙
∇
r
E
F
(
r
)
, rather than the electric field
∇
r
E
c
(
r
)
∕
e
or the quasi-Fermi potential gradient
∇
r
E
F
(
r
)
∕
e
, as is usually assumed. This takes place at both high and low carrier densities. The methods for derivation of
μ
(
f
)
in both cases are presented. The analysis is applied to numerical simulation of a
p
-
i
-
n
photodiode, and it is shown that the use of
μ
(
F
)
with
F
(
r
)
=
∣
∇
r
E
c
(
r
)
∕
e
∣
results in grossly exaggerated carrier drift velocities. The implications for drift-diffusion models used in commercial device simulators are discussed. |
|---|---|
| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.2420787 |