Effects of O 3 and H 2 O oxidants on C and N-related impurities in atomic-layer-deposited La 2 O 3 films observed by in situ x-ray photoelectron spectroscopy

The effect of H 2 O and O 3 oxidants on the behavior of residual C and N-related impurities as well as Si out-diffusion and interfacial layer formation in atomic-layer-deposited La 2 O 3 films grown at 250 ° C were examined using in situ x-ray photoelectron spectroscopy. The silicate formation was s...

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Published in:Applied physics letters 2010-09, Vol.97 (9), p.092904-092904-3
Main Authors: Park, Tae Joo, Sivasubramani, Prasanna, Coss, Brian E., Kim, Hyun-Chul, Lee, Bongki, Wallace, Robert M., Kim, Jiyoung, Rousseau, Mike, Liu, Xinye, Li, Huazhi, Lehn, Jean-Sebastien, Hong, Daewon, Shenai, Deo
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Summary:The effect of H 2 O and O 3 oxidants on the behavior of residual C and N-related impurities as well as Si out-diffusion and interfacial layer formation in atomic-layer-deposited La 2 O 3 films grown at 250 ° C were examined using in situ x-ray photoelectron spectroscopy. The silicate formation was suppressed in a La 2 O 3 film grown using O 3 compared to that deposited using H 2 O , but interfacial layer growth was enhanced. The accumulation of C and N-related residues with low binding energy, which originated from incomplete reactions, was suppressed in La 2 O 3 films grown using O 3 . However, the use of O 3 resulted in La-carbonate phase in film.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3481377