Magnetic properties of the layered III-VI diluted magnetic semiconductor Ga1−x Fe x Te

• Published in: AIP advances 2016-05, Vol.6 (5)
• Main Authors: Pekarek, T. M., Edwards, P. S., Olejniczak, T. L., Lampropoulos, C., Miotkowski, I., Ramdas, A. K.
• Format: Article
• Language: English
• ISSN: 2158-3226; 2158-3226
• DOI: 10.1063/1.4945335

Magnetic properties of single crystalline Ga1−x Fe x Te (x = 0.05) have been measured. GaTe and related layered III-VI semiconductors exhibit a rich collection of important properties for THz generation and detection. The magnetization versus field for an x = 0.05 sample deviates from the linear response seen previously in Ga1−x Mn x Se and Ga1−x Mn x S and reaches a maximum of 0.68 emu/g at 2 K in 7 T. The magnetization of Ga1−x Fe x Te saturates rapidly even at room temperature where the magnetization reaches 50% of saturation in a field of only 0.2 T. In 0.1 T at temperatures between 50 and 400 K, the magnetization drops to a roughly constant 0.22 emu/g. In 0 T, the magnetization drops to zero with no hysteresis present. The data is consistent with Van-Vleck paramagnetism combined with a pronounced crystalline anisotropy, which is similar to that observed for Ga1−x Fe x Se. Neither the broad thermal hysteresis observed from 100-300 K in In1−x Mn x Se nor the spin-glass behavior observed around 10.9 K in Ga1−x Mn x S are observed in Ga1−x Fe x Te. Single crystal x-ray diffraction data yield a rhombohedral space group bearing hexagonal axes, namely R3c. The unit cell dimensions were a = 5.01 Å, b = 5.01 Å, and c = 17.02 Å, with α = 90°, β = 90°, and γ = 120° giving a unit cell volume of 369 Å3.