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Mechanisms governing metal vacancy formation in BaTiO3 and SrTiO3
Barium titanate (BTO) and strontium titanate (STO) are often treated as close analogues, and models of defect behavior are freely transferred from one material to the other with only minor modifications. On the other hand, it is often reported that B-site vacancies (vB) are the dominant metal vacanc...
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Published in: | Journal of applied physics 2018-09, Vol.124 (11) |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Barium titanate (BTO) and strontium titanate (STO) are often treated as close analogues,
and models of defect behavior are freely transferred from one material to the other with
only minor modifications. On the other hand, it is often reported that B-site vacancies
(vB) are the dominant metal vacancy in BTO, while A-site vacancies
(vA) dominate in STO. This difference precludes the use of analogous defect
models for BTO and STO, begging the question: how similar are the defect chemistries of
the two materials? Here, we address this question with density functional theory
calculations using a state-of-the-art hybrid exchange correlation functional, which more
accurately describes the electronic structure and charge localization than traditional
functionals. We find that vA is the dominant metal vacancy in STO but that
different combinations of vA, vB, and vB-vO
complexes are present in BTO depending on processing and doping. Mechanistically, this
occurs for two reasons: thermodynamic differences in the accessible processing conditions
of the two materials and energy differences in the bonds broken when forming the
vacancies. These differences can also lead to widely differing responses when impurity
dopants are intentionally added. Therefore, the response of metal vacancy behavior in BTO
and STO to the inclusion of niobium and iron, two typical dopants in these systems, is
examined and compared. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.5044746 |