Enhanced emission from ultra-thin long wavelength infrared superlattices on epitaxial plasmonic materials

Molecular beam epitaxy allows for the monolithic integration of wavelength-flexible epitaxial infrared plasmonic materials with quantum-engineered infrared optoelectronic active regions. We experimentally demonstrate a sixfold enhancement in photoluminescence from ultrathin (total thickness λ o / 33...

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Bibliographic Details
Published in:Applied physics letters 2020-01, Vol.116 (2)
Main Authors: Nordin, L., Li, K., Briggs, A., Simmons, E., Bank, S. R., Podolskiy, V. A., Wasserman, D.
Format: Article
Language:English
Subjects:
Applied physics
Emission analysis
Emitters
Green's functions
Infrared radiation
Molecular beam epitaxy
Numerical models
Optoelectronics
Photoluminescence
Substrates
Superlattices
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Summary:Molecular beam epitaxy allows for the monolithic integration of wavelength-flexible epitaxial infrared plasmonic materials with quantum-engineered infrared optoelectronic active regions. We experimentally demonstrate a sixfold enhancement in photoluminescence from ultrathin (total thickness λ o / 33) long wavelength infrared (LWIR) superlattices grown on highly doped semiconductor “designer metal” virtual substrates when compared to the same superlattice grown on an undoped virtual substrate. Analytical and numerical models of the emission process via a dyadic Green's function formalism are in agreement with experimental results and relate the observed enhancement of emission to a combination of Purcell enhancement due to surface plasmon modes as well as directionality enhancement due to cavity-substrate-emitter interaction. The results presented provide a potential pathway toward efficient, ultrasubwavelength LWIR emitter devices, as well as a monolithic epitaxial architecture offering the opportunity to investigate the ultimate limits of light-matter interaction in coupled plasmonic/optoelectronic materials.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5132311