Reliable operation of Cr2O3:Mg/ β-Ga2O3 p–n heterojunction diodes at 600 °C

Beta gallium oxide ( β-Ga2O3)-based semiconductor heterojunctions have recently demonstrated improved performance at high voltages and elevated temperatures and are, thus, promising for applications in power electronic devices and harsh environment sensors. However, the long-term reliability of thes...

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Bibliographic Details
Published in:Applied physics letters 2024-04, Vol.124 (15)
Main Authors: Callahan, William A., Egbo, Kingsley, Lee, Cheng-Wei, Ginley, David, O'Hayre, Ryan, Zakutayev, Andriy
Format: Article
Language:English
Subjects:
Chemical reactions
Chromium oxides
Contact pressure
Diodes
electrical properties and parameters
electronic devices
Gallium oxides
Heterojunctions
heterostructures
High temperature
Leakage current
MATERIALS SCIENCE
ohmic contacts
Operating temperature
p-n junction diodes
P-n junctions
Phase stability
Reliability analysis
Room temperature
Secondary ion mass spectrometry
Semiconductor devices
Temperature
thermodynamic functions
transition metal oxides
Ultrawideband
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